All MOSFET. OSG65R099KT3ZF Datasheet

 

OSG65R099KT3ZF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG65R099KT3ZF
   Marking Code: OSG65R099KT3Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 136 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO263

 OSG65R099KT3ZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG65R099KT3ZF Datasheet (PDF)

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