OSG65R120FT3F Datasheet. Specs and Replacement

Type Designator: OSG65R120FT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66.2 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220F

OSG65R120FT3F substitution

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OSG65R120FT3F datasheet

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 6.3. Size:887K  oriental semi
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Detailed specifications: OSG65R099HSF, OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF, OSG65R108HSZF, 12N60, OSG65R125FF, OSG65R125FSF, OSG65R125FZF, OSG65R125HF, OSG65R125HT3ZF, OSG65R125IF, OSG65R125JF, OSG65R125KF

Keywords - OSG65R120FT3F MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs