OSG65R125FF Datasheet. Specs and Replacement
Type Designator: OSG65R125FF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30.8 nS
Cossⓘ - Output Capacitance: 154.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220F
OSG65R125FF substitution
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OSG65R125FF datasheet
Detailed specifications: OSG65R099HSZF, OSG65R099HT3ZF, OSG65R099HZF, OSG65R099KT3ZF, OSG65R099PT3ZF, OSG65R099TT3ZF, OSG65R108HSZF, OSG65R120FT3F, 5N65, OSG65R125FSF, OSG65R125FZF, OSG65R125HF, OSG65R125HT3ZF, OSG65R125IF, OSG65R125JF, OSG65R125KF, OSG65R125PF
Keywords - OSG65R125FF MOSFET specs
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