OSG65R125FF Datasheet and Replacement
Type Designator: OSG65R125FF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30.8 nS
Cossⓘ - Output Capacitance: 154.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220F
OSG65R125FF substitution
OSG65R125FF Datasheet (PDF)
Datasheet: OSG65R099HSZF , OSG65R099HT3ZF , OSG65R099HZF , OSG65R099KT3ZF , OSG65R099PT3ZF , OSG65R099TT3ZF , OSG65R108HSZF , OSG65R120FT3F , 5N65 , OSG65R125FSF , OSG65R125FZF , OSG65R125HF , OSG65R125HT3ZF , OSG65R125IF , OSG65R125JF , OSG65R125KF , OSG65R125PF .
History: SQD100N04-3M6
Keywords - OSG65R125FF MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SQD100N04-3M6
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