OSG65R125IF Datasheet. Specs and Replacement

Type Designator: OSG65R125IF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 219 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30.8 nS

Cossⓘ - Output Capacitance: 154.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO262

OSG65R125IF substitution

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OSG65R125IF datasheet

 ..1. Size:924K  oriental semi
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OSG65R125IF

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 5.1. Size:906K  oriental semi
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OSG65R125IF

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 5.2. Size:881K  oriental semi
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OSG65R125IF

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 5.3. Size:887K  oriental semi
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Detailed specifications: OSG65R099TT3ZF, OSG65R108HSZF, OSG65R120FT3F, OSG65R125FF, OSG65R125FSF, OSG65R125FZF, OSG65R125HF, OSG65R125HT3ZF, CS150N03A8, OSG65R125JF, OSG65R125KF, OSG65R125PF, OSG65R125PZF, OSG65R130HT3ZF, OSG65R130PT3ZF, OSG65R140FSZF, OSG65R140H4SZF

Keywords - OSG65R125IF MOSFET specs

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