All MOSFET. OSG65R125JF Datasheet

 

OSG65R125JF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG65R125JF
   Marking Code: OSG65R125J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 219 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.9 nC
   trⓘ - Rise Time: 30.8 nS
   Cossⓘ - Output Capacitance: 154.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: PDFN8X8

 OSG65R125JF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG65R125JF Datasheet (PDF)

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