OSG65R125PF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R125PF
Marking Code: OSG65R125P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 41.9 nC
Rise Time (tr): 30.8 nS
Drain-Source Capacitance (Cd): 154.1 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO220
OSG65R125PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R125PF Datasheet (PDF)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
