OSG65R125PZF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R125PZF
Marking Code: OSG65R125PZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40.3 nC
Rise Time (tr): 91.4 nS
Drain-Source Capacitance (Cd): 165.3 pF
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO220
OSG65R125PZF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R125PZF Datasheet (PDF)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
