OSG65R140FSZF Datasheet. Specs and Replacement

Type Designator: OSG65R140FSZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68.8 nS

Cossⓘ - Output Capacitance: 151.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO220F

OSG65R140FSZF substitution

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OSG65R140FSZF datasheet

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OSG65R140FSZF

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 5.1. Size:926K  oriental semi
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 5.2. Size:882K  oriental semi
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 5.3. Size:874K  oriental semi
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Detailed specifications: OSG65R125HT3ZF, OSG65R125IF, OSG65R125JF, OSG65R125KF, OSG65R125PF, OSG65R125PZF, OSG65R130HT3ZF, OSG65R130PT3ZF, BS170, OSG65R140H4SZF, OSG65R140HSZF, OSG65R140K7SZF, OSG65R140KSZF, OSG65R140PSZF, OSG65R1K5DZF, OSG65R200FEF, OSG65R200FEF-NB

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