OSG65R200HF Datasheet. Specs and Replacement

Type Designator: OSG65R200HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.8 nS

Cossⓘ - Output Capacitance: 92.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

OSG65R200HF substitution

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OSG65R200HF datasheet

 ..1. Size:1060K  oriental semi
 osg65r200hf.pdf pdf_icon

OSG65R200HF

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 5.1. Size:990K  oriental semi
 osg65r200pf.pdf pdf_icon

OSG65R200HF

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 5.2. Size:1019K  oriental semi
 osg65r200jf.pdf pdf_icon

OSG65R200HF

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 5.3. Size:947K  oriental semi
 osg65r200ft3f.pdf pdf_icon

OSG65R200HF

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Detailed specifications: OSG65R140KSZF, OSG65R140PSZF, OSG65R1K5DZF, OSG65R200FEF, OSG65R200FEF-NB, OSG65R200FF, OSG65R200FSF-NB, OSG65R200FT3F, IRF520, OSG65R200JF, OSG65R200JT3F, OSG65R200KF, OSG65R200PF, OSG65R220FZF, OSG65R220HZF, OSG65R220IZF, OSG65R220KZF

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