OSG65R200KF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R200KF
   Marking Code: OSG65R200K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.8 nC
   Rise Time (tr): 49.8 nS
   Drain-Source Capacitance (Cd): 92.5 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
   Package: TO263

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SSB80R240S2 | 24NM60G-TQ2-R