OSG65R200PF Datasheet. Specs and Replacement

Type Designator: OSG65R200PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.8 nS

Cossⓘ - Output Capacitance: 92.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220

OSG65R200PF substitution

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OSG65R200PF datasheet

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OSG65R200PF

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OSG65R200PF

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 5.3. Size:943K  oriental semi
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Detailed specifications: OSG65R200FEF-NB, OSG65R200FF, OSG65R200FSF-NB, OSG65R200FT3F, OSG65R200HF, OSG65R200JF, OSG65R200JT3F, OSG65R200KF, 2N60, OSG65R220FZF, OSG65R220HZF, OSG65R220IZF, OSG65R220KZF, OSG65R220PZF, OSG65R260DSF, OSG65R260FSF, OSG65R260FSF-NB

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