OSG65R220IZF Datasheet. Specs and Replacement

Type Designator: OSG65R220IZF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82.64 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO262

OSG65R220IZF substitution

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Detailed specifications: OSG65R200FT3F, OSG65R200HF, OSG65R200JF, OSG65R200JT3F, OSG65R200KF, OSG65R200PF, OSG65R220FZF, OSG65R220HZF, 75N75, OSG65R220KZF, OSG65R220PZF, OSG65R260DSF, OSG65R260FSF, OSG65R260FSF-NB, OSG65R290AF, OSG65R290DF, OSG65R290FEF-NB

Keywords - OSG65R220IZF MOSFET specs

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