OSG65R260FSF-NB MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R260FSF-NB
Marking Code: OSG65R260FS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26.4 nC
trⓘ - Rise Time: 7.3 nS
Cossⓘ - Output Capacitance: 100.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO220F
OSG65R260FSF-NB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R260FSF-NB Datasheet (PDF)
osg65r260fsf nb.pdf
OSG65R260FSF_NB_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R260FSF_NB , Enhancement Mode N-Channel Power MOSFET General Description OSG65R260FSF_NB
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