OSG65R2K4AF PDF and Equivalents Search

 

OSG65R2K4AF Specs and Replacement


   Type Designator: OSG65R2K4AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 28.8 nS
   Cossⓘ - Output Capacitance: 12.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
 

 OSG65R2K4AF substitution

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OSG65R2K4AF datasheet

 ..1. Size:1026K  oriental semi
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 5.1. Size:986K  oriental semi
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 5.2. Size:985K  oriental semi
 osg65r2k4pf.pdf pdf_icon

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 5.3. Size:1064K  oriental semi
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Detailed specifications: OSG65R260FSF-NB , OSG65R290AF , OSG65R290DF , OSG65R290FEF-NB , OSG65R290FF , OSG65R290FTF , OSG65R290KF , OSG65R290PF , K2611 , OSG65R2K4DF , OSG65R2K4FF , OSG65R2K4PF , OSG65R2KAF , OSG65R2KDF , OSG65R2KFF , OSG65R2KFSF , OSG65R2KPF .

History: JMTQ100N03D | JMSL06120UQ | FDD20AN06F085 | STK820

Keywords - OSG65R2K4AF MOSFET specs

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