OSG65R2KAF Datasheet. Specs and Replacement

Type Designator: OSG65R2KAF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.4 nS

Cossⓘ - Output Capacitance: 13.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO251

OSG65R2KAF substitution

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OSG65R2KAF datasheet

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 6.2. Size:978K  oriental semi
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 6.3. Size:986K  oriental semi
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Detailed specifications: OSG65R290FF, OSG65R290FTF, OSG65R290KF, OSG65R290PF, OSG65R2K4AF, OSG65R2K4DF, OSG65R2K4FF, OSG65R2K4PF, AOD4184A, OSG65R2KDF, OSG65R2KFF, OSG65R2KFSF, OSG65R2KPF, OSG65R340DZF, OSG65R340FZF, OSG65R360DEF, OSG65R360GEF

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