OSG65R2KPF Datasheet. Specs and Replacement
Type Designator: OSG65R2KPF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 22.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11.4 nS
Cossⓘ - Output Capacitance: 13.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO220
OSG65R2KPF substitution
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OSG65R2KPF datasheet
Detailed specifications: OSG65R2K4AF, OSG65R2K4DF, OSG65R2K4FF, OSG65R2K4PF, OSG65R2KAF, OSG65R2KDF, OSG65R2KFF, OSG65R2KFSF, AO4468, OSG65R340DZF, OSG65R340FZF, OSG65R360DEF, OSG65R360GEF, OSG65R360JEF, OSG65R360PEF, OSG65R380AF, OSG65R380DF
Keywords - OSG65R2KPF MOSFET specs
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