OSG65R420AF Datasheet. Specs and Replacement

Type Designator: OSG65R420AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.1 nS

Cossⓘ - Output Capacitance: 52.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO251

OSG65R420AF substitution

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OSG65R420AF datasheet

 ..1. Size:1020K  oriental semi
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OSG65R420AF

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 5.1. Size:982K  oriental semi
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 5.2. Size:1025K  oriental semi
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 5.3. Size:1022K  oriental semi
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Detailed specifications: OSG65R380FSF-NB, OSG65R380FTF, OSG65R380FZF, OSG65R380IF, OSG65R380KF, OSG65R380KSF, OSG65R380PF, OSG65R385DTF, IRFB4115, OSG65R420DF, OSG65R420FF, OSG65R420PF, OSG65R460AZF, OSG65R460DZ, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF

Keywords - OSG65R420AF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs