OSG65R580DT3F Datasheet. Specs and Replacement

Type Designator: OSG65R580DT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO252

OSG65R580DT3F substitution

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OSG65R580DT3F datasheet

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Detailed specifications: OSG65R420PF, OSG65R460AZF, OSG65R460DZ, OSG65R460FZF, OSG65R460FZF-NB, OSG65R460PZF, OSG65R580AF, OSG65R580DF, 2N7002, OSG65R580DTF, OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, OSG65R580FT3F, OSG65R580FTF, OSG65R580IF

Keywords - OSG65R580DT3F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.