OSG65R580FT3F Datasheet. Specs and Replacement

Type Designator: OSG65R580FT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO220F

OSG65R580FT3F substitution

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OSG65R580FT3F datasheet

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 4.1. Size:919K  oriental semi
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 4.2. Size:1124K  oriental semi
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Detailed specifications: OSG65R580AF, OSG65R580DF, OSG65R580DT3F, OSG65R580DTF, OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, IRFP260, OSG65R580FTF, OSG65R580IF, OSG65R580KF, OSG65R580KT3F, OSG65R580PF, OSG65R600DSF, OSG65R600FSF, OSG65R600FSF-NB

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