OSG65R580KT3F Datasheet. Specs and Replacement

Type Designator: OSG65R580KT3F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO263

OSG65R580KT3F substitution

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OSG65R580KT3F datasheet

 ..1. Size:903K  oriental semi
 osg65r580kt3f.pdf pdf_icon

OSG65R580KT3F

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 4.1. Size:1035K  oriental semi
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OSG65R580KT3F

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 5.1. Size:919K  oriental semi
 osg65r580fef-nb.pdf pdf_icon

OSG65R580KT3F

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 5.2. Size:1124K  oriental semi
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Detailed specifications: OSG65R580FEF, OSG65R580FEF-NB, OSG65R580FF, OSG65R580FSF, OSG65R580FT3F, OSG65R580FTF, OSG65R580IF, OSG65R580KF, K4145, OSG65R580PF, OSG65R600DSF, OSG65R600FSF, OSG65R600FSF-NB, OSG65R650DZF, OSG65R650FZF, OSG65R650A, OSG65R650D

Keywords - OSG65R580KT3F MOSFET specs

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