OSG65R580KT3F MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R580KT3F
   Marking Code: OSG65R580KT3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO263

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRFB4620 | APQ5ESN40A