All MOSFET. OSG65R600DSF Datasheet

 

OSG65R600DSF Datasheet and Replacement


   Type Designator: OSG65R600DSF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252
 

 OSG65R600DSF substitution

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OSG65R600DSF Datasheet (PDF)

 ..1. Size:923K  oriental semi
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OSG65R600DSF

 5.1. Size:998K  oriental semi
osg65r600fsf-nb.pdf pdf_icon

OSG65R600DSF

 5.2. Size:923K  oriental semi
osg65r600fsf.pdf pdf_icon

OSG65R600DSF

 7.1. Size:891K  oriental semi
osg65r650fzf.pdf pdf_icon

OSG65R600DSF

Datasheet: OSG65R580FF , OSG65R580FSF , OSG65R580FT3F , OSG65R580FTF , OSG65R580IF , OSG65R580KF , OSG65R580KT3F , OSG65R580PF , RFP50N06 , OSG65R600FSF , OSG65R600FSF-NB , OSG65R650DZF , OSG65R650FZF , OSG65R650A , OSG65R650D , OSG65R650F , OSG65R650P .

History: GSM3400S | FQN1N50CTA

Keywords - OSG65R600DSF MOSFET datasheet

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