OSG65R600FSF Datasheet. Specs and Replacement

Type Designator: OSG65R600FSF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.6 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

OSG65R600FSF substitution

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OSG65R600FSF datasheet

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OSG65R600FSF

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 0.1. Size:998K  oriental semi
 osg65r600fsf-nb.pdf pdf_icon

OSG65R600FSF

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 5.1. Size:923K  oriental semi
 osg65r600dsf.pdf pdf_icon

OSG65R600FSF

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 7.1. Size:891K  oriental semi
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Detailed specifications: OSG65R580FSF, OSG65R580FT3F, OSG65R580FTF, OSG65R580IF, OSG65R580KF, OSG65R580KT3F, OSG65R580PF, OSG65R600DSF, 12N60, OSG65R600FSF-NB, OSG65R650DZF, OSG65R650FZF, OSG65R650A, OSG65R650D, OSG65R650F, OSG65R650P, OSG65R760AF

Keywords - OSG65R600FSF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs