OSG65R650P Datasheet. Specs and Replacement
Type Designator: OSG65R650P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.4 nS
Cossⓘ - Output Capacitance: 38.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220
OSG65R650P substitution
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OSG65R650P datasheet
Detailed specifications: OSG65R600DSF, OSG65R600FSF, OSG65R600FSF-NB, OSG65R650DZF, OSG65R650FZF, OSG65R650A, OSG65R650D, OSG65R650F, NCEP15T14, OSG65R760AF, OSG65R760DF, OSG65R760FF, OSG65R760IF, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF
Keywords - OSG65R650P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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