OSG65R760AF Datasheet. Specs and Replacement

Type Designator: OSG65R760AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.4 nS

Cossⓘ - Output Capacitance: 31.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO251

OSG65R760AF substitution

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OSG65R760AF datasheet

 ..1. Size:1042K  oriental semi
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OSG65R760AF

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 5.1. Size:1075K  oriental semi
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 5.2. Size:1103K  oriental semi
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 5.3. Size:1043K  oriental semi
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Detailed specifications: OSG65R600FSF, OSG65R600FSF-NB, OSG65R650DZF, OSG65R650FZF, OSG65R650A, OSG65R650D, OSG65R650F, OSG65R650P, AON7506, OSG65R760DF, OSG65R760FF, OSG65R760IF, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, OSG65R900DF

Keywords - OSG65R760AF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs