OSG65R900AF Datasheet. Specs and Replacement

Type Designator: OSG65R900AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251

OSG65R900AF substitution

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OSG65R900AF datasheet

 ..1. Size:974K  oriental semi
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OSG65R900AF

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 4.1. Size:896K  oriental semi
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 5.1. Size:1029K  oriental semi
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 5.2. Size:1016K  oriental semi
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Detailed specifications: OSG65R650D, OSG65R650F, OSG65R650P, OSG65R760AF, OSG65R760DF, OSG65R760FF, OSG65R760IF, OSG65R760PF, BS170, OSG65R900ATF, OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF

Keywords - OSG65R900AF MOSFET specs

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