OSG65R900ATF Datasheet and Replacement
Type Designator: OSG65R900ATF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 30.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO251
OSG65R900ATF substitution
OSG65R900ATF Datasheet (PDF)
Datasheet: OSG65R650F , OSG65R650P , OSG65R760AF , OSG65R760DF , OSG65R760FF , OSG65R760IF , OSG65R760PF , OSG65R900AF , 4N60 , OSG65R900DEF , OSG65R900DF , OSG65R900FEF , OSG65R900FF , OSG65R900FTF , OSG65R900GTF , OSG65R900PF , OSG70R1K4AF .
History: HCS80R1K4ST | AM30N10-70DE | HCS90R800S | OSG65R900DF | FDPF14N30T | NDD02N40 | IPI60R380C6
Keywords - OSG65R900ATF MOSFET datasheet
OSG65R900ATF cross reference
OSG65R900ATF equivalent finder
OSG65R900ATF lookup
OSG65R900ATF substitution
OSG65R900ATF replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HCS80R1K4ST | AM30N10-70DE | HCS90R800S | OSG65R900DF | FDPF14N30T | NDD02N40 | IPI60R380C6
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