OSG65R900DEF Datasheet and Replacement
Type Designator: OSG65R900DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 30.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO252
OSG65R900DEF substitution
OSG65R900DEF Datasheet (PDF)
Datasheet: OSG65R650P , OSG65R760AF , OSG65R760DF , OSG65R760FF , OSG65R760IF , OSG65R760PF , OSG65R900AF , OSG65R900ATF , IRFP250 , OSG65R900DF , OSG65R900FEF , OSG65R900FF , OSG65R900FTF , OSG65R900GTF , OSG65R900PF , OSG70R1K4AF , OSG70R1K4DF .
History: OSG65R900FF | OSG65R900DF | SPP08P06P | AM30N10-70DE | FDPF14N30T | SPN10T10
Keywords - OSG65R900DEF MOSFET datasheet
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OSG65R900DEF replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: OSG65R900FF | OSG65R900DF | SPP08P06P | AM30N10-70DE | FDPF14N30T | SPN10T10
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