OSG65R900DEF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R900DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 30.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO252
OSG65R900DEF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R900DEF Datasheet (PDF)
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