OSG65R900FEF Datasheet. Specs and Replacement

Type Designator: OSG65R900FEF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 30.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220F

OSG65R900FEF substitution

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OSG65R900FEF datasheet

 ..1. Size:1076K  oriental semi
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OSG65R900FEF

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 4.1. Size:1074K  oriental semi
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 4.2. Size:934K  oriental semi
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 5.1. Size:1029K  oriental semi
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Detailed specifications: OSG65R760DF, OSG65R760FF, OSG65R760IF, OSG65R760PF, OSG65R900AF, OSG65R900ATF, OSG65R900DEF, OSG65R900DF, 2SK3568, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF, OSG70R1K4AF, OSG70R1K4DF, OSG70R1K4FF, OSG70R1K4PF

Keywords - OSG65R900FEF MOSFET specs

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