OSG70R1K4AF Datasheet. Specs and Replacement

Type Designator: OSG70R1K4AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.4 nS

Cossⓘ - Output Capacitance: 18.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

OSG70R1K4AF substitution

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OSG70R1K4AF datasheet

 ..1. Size:1027K  oriental semi
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OSG70R1K4AF

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 5.1. Size:1013K  oriental semi
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 5.2. Size:996K  oriental semi
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 5.3. Size:973K  oriental semi
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Detailed specifications: OSG65R900ATF, OSG65R900DEF, OSG65R900DF, OSG65R900FEF, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF, AO3407, OSG70R1K4DF, OSG70R1K4FF, OSG70R1K4PF, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF, OSG70R1KPF, OSG70R280KF

Keywords - OSG70R1K4AF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.