OSG70R1K4PF Datasheet. Specs and Replacement
Type Designator: OSG70R1K4PF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.4 nS
Cossⓘ - Output Capacitance: 18.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220
OSG70R1K4PF substitution
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OSG70R1K4PF datasheet
Detailed specifications: OSG65R900FEF, OSG65R900FF, OSG65R900FTF, OSG65R900GTF, OSG65R900PF, OSG70R1K4AF, OSG70R1K4DF, OSG70R1K4FF, IRF520, OSG70R1KAF, OSG70R1KDF, OSG70R1KFF, OSG70R1KPF, OSG70R280KF, OSG70R290DF, OSG70R2K6AF, OSG70R2K6DF
Keywords - OSG70R1K4PF MOSFET specs
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