OSG70R900DTF Datasheet. Specs and Replacement

Type Designator: OSG70R900DTF

Marking Code: OSG70R900DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 7.9 nC

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 24.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

OSG70R900DTF substitution

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OSG70R900DTF datasheet

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 8.3. Size:1060K  oriental semi
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Detailed specifications: OSG70R500FF, OSG70R500PF, OSG70R600AF, OSG70R600DF, OSG70R600DSF, OSG70R750AF, OSG70R750FF, OSG70R750PF, IRF540N, OSG80R069HF, OSG80R140KF, OSG80R190HF, OSG80R190PF, OSG80R1K4AF, OSG80R1K4FF, OSG80R1K4PF, OSG80R250HF

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs