OSG80R1K4AF Datasheet. Specs and Replacement

Type Designator: OSG80R1K4AF  📄📄 

Marking Code: OSG80R1K4A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 7.5 nC

tr ⓘ - Rise Time: 5.7 nS

Cossⓘ - Output Capacitance: 25.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

OSG80R1K4AF substitution

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OSG80R1K4AF datasheet

 ..1. Size:1008K  oriental semi
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 5.1. Size:1077K  oriental semi
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 5.2. Size:1068K  oriental semi
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 5.3. Size:1009K  oriental semi
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Detailed specifications: OSG70R750AF, OSG70R750FF, OSG70R750PF, OSG70R900DTF, OSG80R069HF, OSG80R140KF, OSG80R190HF, OSG80R190PF, IRF640, OSG80R1K4FF, OSG80R1K4PF, OSG80R250HF, OSG80R250KF, OSG80R250PF, OSG80R2KFF, OSG80R300FF, OSG80R300JF

Keywords - OSG80R1K4AF MOSFET specs

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