All MOSFET. OSG80R380KF Datasheet

 

OSG80R380KF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG80R380KF
   Marking Code: OSG80R380K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.2 nC
   Rise Time (tr): 15.8 nS
   Drain-Source Capacitance (Cd): 83.7 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
   Package: TO263

 OSG80R380KF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG80R380KF Datasheet (PDF)

 ..1. Size:877K  oriental semi
osg80r380kf.pdf

OSG80R380KF OSG80R380KF

 5.1. Size:942K  oriental semi
osg80r380df.pdf

OSG80R380KF OSG80R380KF

 5.2. Size:971K  oriental semi
osg80r380pf.pdf

OSG80R380KF OSG80R380KF

 5.3. Size:909K  oriental semi
osg80r380dsf.pdf

OSG80R380KF OSG80R380KF

 5.4. Size:945K  oriental semi
osg80r380hf.pdf

OSG80R380KF OSG80R380KF

 5.5. Size:945K  oriental semi
osg80r380ff.pdf

OSG80R380KF OSG80R380KF

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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