OSG80R650IF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG80R650IF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11.4 nS
Cossⓘ - Output Capacitance: 44.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO262
OSG80R650IF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG80R650IF Datasheet (PDF)
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