OSG80R900DF Datasheet. Specs and Replacement

Type Designator: OSG80R900DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.4 nS

Cossⓘ - Output Capacitance: 36.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO252

OSG80R900DF substitution

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OSG80R900DF datasheet

 ..1. Size:852K  oriental semi
 osg80r900df.pdf pdf_icon

OSG80R900DF

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 5.1. Size:867K  oriental semi
 osg80r900ff.pdf pdf_icon

OSG80R900DF

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 8.1. Size:942K  oriental semi
 osg80r380df.pdf pdf_icon

OSG80R900DF

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 8.2. Size:1007K  oriental semi
 osg80r650pf.pdf pdf_icon

OSG80R900DF

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Detailed specifications: OSG80R380KF, OSG80R380PF, OSG80R600FF, OSG80R650AF, OSG80R650DF, OSG80R650FF, OSG80R650IF, OSG80R650PF, 2N7002, OSG80R900FF, OSG90R1K2AF, OSG90R1K2DF, OSG90R1K2IF, OSG90R1K2KF, OSG90R1K2FF, OSG90R250FF, OSG90R250HF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.