All MOSFET. OSG80R900FF Datasheet

 

OSG80R900FF Datasheet and Replacement


   Type Designator: OSG80R900FF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16.4 nS
   Cossⓘ - Output Capacitance: 36.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
 

 OSG80R900FF substitution

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OSG80R900FF Datasheet (PDF)

 ..1. Size:867K  oriental semi
osg80r900ff.pdf pdf_icon

OSG80R900FF

 5.1. Size:852K  oriental semi
osg80r900df.pdf pdf_icon

OSG80R900FF

 8.1. Size:942K  oriental semi
osg80r380df.pdf pdf_icon

OSG80R900FF

 8.2. Size:1007K  oriental semi
osg80r650pf.pdf pdf_icon

OSG80R900FF

Datasheet: OSG80R380PF , OSG80R600FF , OSG80R650AF , OSG80R650DF , OSG80R650FF , OSG80R650IF , OSG80R650PF , OSG80R900DF , IRF1010E , OSG90R1K2AF , OSG90R1K2DF , OSG90R1K2IF , OSG90R1K2KF , OSG90R1K2FF , OSG90R250FF , OSG90R250HF , OSG90R340KF .

Keywords - OSG80R900FF MOSFET datasheet

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