OSG80R900FF Datasheet. Specs and Replacement

Type Designator: OSG80R900FF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.4 nS

Cossⓘ - Output Capacitance: 36.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220F

OSG80R900FF substitution

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OSG80R900FF datasheet

 ..1. Size:867K  oriental semi
 osg80r900ff.pdf pdf_icon

OSG80R900FF

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 5.1. Size:852K  oriental semi
 osg80r900df.pdf pdf_icon

OSG80R900FF

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 8.1. Size:942K  oriental semi
 osg80r380df.pdf pdf_icon

OSG80R900FF

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 8.2. Size:1007K  oriental semi
 osg80r650pf.pdf pdf_icon

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Detailed specifications: OSG80R380PF, OSG80R600FF, OSG80R650AF, OSG80R650DF, OSG80R650FF, OSG80R650IF, OSG80R650PF, OSG80R900DF, IRF9540N, OSG90R1K2AF, OSG90R1K2DF, OSG90R1K2IF, OSG90R1K2KF, OSG90R1K2FF, OSG90R250FF, OSG90R250HF, OSG90R340KF

Keywords - OSG80R900FF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs