All MOSFET. OSG90R1K2DF Datasheet

 

OSG90R1K2DF MOSFET. Datasheet pdf. Equivalent


   Type Designator: OSG90R1K2DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26.5 nS
   Cossⓘ - Output Capacitance: 37.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252

 OSG90R1K2DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

OSG90R1K2DF Datasheet (PDF)

 ..1. Size:843K  oriental semi
osg90r1k2df.pdf

OSG90R1K2DF
OSG90R1K2DF

 5.1. Size:849K  oriental semi
osg90r1k2kf.pdf

OSG90R1K2DF
OSG90R1K2DF

 5.2. Size:844K  oriental semi
osg90r1k2if.pdf

OSG90R1K2DF
OSG90R1K2DF

 5.3. Size:986K  oriental semi
osg90r1k2ff.pdf

OSG90R1K2DF
OSG90R1K2DF

 5.4. Size:843K  oriental semi
osg90r1k2af.pdf

OSG90R1K2DF
OSG90R1K2DF

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM6N80K

 

 
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