OSG90R1K2IF Datasheet. Specs and Replacement

Type Designator: OSG90R1K2IF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.5 nS

Cossⓘ - Output Capacitance: 37.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO262

OSG90R1K2IF substitution

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OSG90R1K2IF datasheet

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 5.3. Size:986K  oriental semi
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Detailed specifications: OSG80R650DF, OSG80R650FF, OSG80R650IF, OSG80R650PF, OSG80R900DF, OSG80R900FF, OSG90R1K2AF, OSG90R1K2DF, AO3401, OSG90R1K2KF, OSG90R1K2FF, OSG90R250FF, OSG90R250HF, OSG90R340KF, OSG90R380HZF, OSG95R1K2FF, OSG95R1K2PF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.