FDN361BN PDF and Equivalents Search

 

FDN361BN PDF Specs and Replacement


   Type Designator: FDN361BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SSOT3
 

 FDN361BN substitution

   - MOSFET ⓘ Cross-Reference Search

 

FDN361BN PDF Specs

 ..1. Size:129K  fairchild semi
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FDN361BN

February 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 110 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 160 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superio... See More ⇒

 ..2. Size:244K  onsemi
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FDN361BN

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.1. Size:775K  fairchild semi
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FDN361BN

April 1999 FDN361AN N-Channel, Logic Level, PowerTrench Features General Description This N-Channel Logic Level MOSFET is produced using 1.8 A, 30 V. RDS(on) = 0.100 @ VGS = 10 V Fairchild Semiconductor's PowerTrench process that has RDS(on) = 0.150 @ VGS = 4.5 V. been especially tailored to minimize the on-state resistance and yet maintain low... See More ⇒

 9.1. Size:222K  1
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FDN361BN

Preliminary May 2003 FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240m Features Applications rDS(ON) = 200m (Typ.), VGS = 10V, ID = 1A DC/DC converters Qg(tot) = 4nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82720 D D S G G S SuperSOT-3 MOSFET Maximum... See More ⇒

Detailed specifications: FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A , AO3407 , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 , STM4840 , FDN86246 .

History: 40N10 | STM4886

Keywords - FDN361BN MOSFET specs

 FDN361BN cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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