SFG100N10PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG100N10PF
   Marking Code: SFG100N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 148 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55.6 nC
   Rise Time (tr): 8.6 nS
   Drain-Source Capacitance (Cd): 560 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
   Package: TO220

SFG100N10PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search