SFG10R20AF Datasheet. Specs and Replacement

Type Designator: SFG10R20AF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 72 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.9 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO251

SFG10R20AF substitution

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SFG10R20AF datasheet

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Detailed specifications: SFG10R12AF, SFG10R12BF, SFG10R12DF, SFG10R12GF, SFG10R12PF, SFG10R140DF, SFG10R14BF, SFG10R14GF, IRF740, SFG10R20BF, SFG10R20DF, SFG10R20GF, SFG10R20PF, SFG10R50DF, SFG10R75BCF, SFG10R75DF, SFG10S08DF

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