SFG10R20BF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG10R20BF
   Marking Code: SFG10R20B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.8 nC
   trⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8

SFG10R20BF Transistor Equivalent Substitute - MOSFET Cross-Reference Search