SFG10S08GF MOSFET. Datasheet pdf. Equivalent
Type Designator: SFG10S08GF
Marking Code: SFG10S08G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49.9 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 361 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5X6
SFG10S08GF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFG10S08GF Datasheet (PDF)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 40N15G-TF2-T | STU313D | FDMS8D8N15C | DE275X2-102N06A | FDMS86300
History: 40N15G-TF2-T | STU313D | FDMS8D8N15C | DE275X2-102N06A | FDMS86300
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918