SFG10S12DF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG10S12DF
   Marking Code: SFG10S12D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 683 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252

SFG10S12DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search