SFG10S20DF MOSFET. Datasheet pdf. Equivalent
Type Designator: SFG10S20DF
Marking Code: SFG10S20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 71 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 16.2 nC
Rise Time (tr): 3.8 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: TO252
SFG10S20DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFG10S20DF Datasheet (PDF)
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