SFS06R02DF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFS06R02DF
   Marking Code: SFS06R02D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 106 nC
   Rise Time (tr): 8.1 nS
   Drain-Source Capacitance (Cd): 1260 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0025 Ohm
   Package: TO252

SFS06R02DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search