SFS10R055DNF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFS10R055DNF
   Marking Code: SFS10R055DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 71.2 nC
   trⓘ - Rise Time: 38.4 nS
   Cossⓘ - Output Capacitance: 1550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252

SFS10R055DNF Transistor Equivalent Substitute - MOSFET Cross-Reference Search