AP30H80Q PDF and Equivalents Search

 

AP30H80Q Specs and Replacement

Type Designator: AP30H80Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.5 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: PDFN3X3-8L

AP30H80Q substitution

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Detailed specifications: SFS130N06GF, SFS15R065KNF, SFS15R065PNF, AP0803QD, AP2045Q, AP20P30Q, AP30H50Q, AP30H80G, AOD4184A, AP3908GD, AP3908QD, AP3910GD, AP4008QD, AP4085G, AP4822QD, AP4910GD, AP60P20Q

Keywords - AP30H80Q MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

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