APG095N01G PDF and Equivalents Search

 

APG095N01G Specs and Replacement

Type Designator: APG095N01G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 618 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: PDFN5X6-8L

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Detailed specifications: AP60P20Q, AP68N06G, AP80N04G, AP80N04Q, AP90N03Q, AP90P03G, AP90P03Q, APG077N01G, IRF640, ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R, ASDM30P30CTD-R, ASDM40N52E-R, AUIRFN8405TR, CJAC100SN08U, CJAC110SN10A

Keywords - APG095N01G MOSFET specs

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