APG095N01G MOSFET. Datasheet pdf. Equivalent

   Type Designator: APG095N01G
   Marking Code: G095N01G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 63 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 60 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 41.8 nC
   Rise Time (tr): 4 nS
   Drain-Source Capacitance (Cd): 618 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0095 Ohm
   Package: PDFN5X6-8L

APG095N01G Transistor Equivalent Substitute - MOSFET Cross-Reference Search