APG095N01G Datasheet and Replacement

   Type Designator: APG095N01G
   Marking Code: G095N01G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 41.8 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 618 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: PDFN5X6-8L
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