CJAC100SN08U PDF and Equivalents Search

 

CJAC100SN08U Specs and Replacement

Type Designator: CJAC100SN08U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm

Package: PDFNWB5X6-8L-B

CJAC100SN08U substitution

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CJAC100SN08U datasheet

 ..1. Size:1763K  1
 cjac100sn08u.pdf pdf_icon

CJAC100SN08U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L-B 80 V 100A 3.0m @10V DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, pr... See More ⇒

 3.1. Size:3049K  jiangsu
 cjac100sn08.pdf pdf_icon

CJAC100SN08U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.9m @10V 80V 100A 4.3m @4.5V DESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte... See More ⇒

 7.1. Size:2466K  1
 cjac100p03.pdf pdf_icon

CJAC100SN08U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU... See More ⇒

 7.2. Size:2466K  jiangsu
 cjac100p03.pdf pdf_icon

CJAC100SN08U

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU... See More ⇒

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Detailed specifications: APG077N01G, APG095N01G, ASDM30N55E-R, ASDM30N65E-R, ASDM30P11TD-R, ASDM30P30CTD-R, ASDM40N52E-R, AUIRFN8405TR, IRFB4227, CJAC110SN10A, CJAC80SN10, DMN3009LFVW-7, DMN3010LFG-7, DMN3016LPS-13, DMNH10H028SPSQ-13, DMNH4006SPSQ-13, DMP2002UPS-13

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